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Brand Name : onsemi
Model Number : NTZS3151PT1G
Place of Origin : original
MOQ : 1
Price : Negotiable
Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability : 999999
Delivery Time : 1-3 days
Packaging Details : standard
Drain to Source Voltage (Vdss) : 20 V
Current - Continuous Drain (Id) @ 25°C : 860mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) : 1.8V, 4.5V
Rds On (Max) @ Id, Vgs : 150mOhm @ 950mA, 4.5V
Vgs(th) (Max) @ Id : 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 5.6 nC @ 4.5 V
NTZS3151PT1G SOT-563 MOSFET Power Electronics Transistor for High-efficiency and High-reliability Applications
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | | |
Current - Continuous Drain (Id) @ 25°C | | |
Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Rds On (Max) @ Id, Vgs | 150mOhm @ 950mA, 4.5V | |
Vgs(th) (Max) @ Id | 1V @ 250µA | |
Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 4.5 V | |
Vgs (Max) | ±8V | |
Input Capacitance (Ciss) (Max) @ Vds | 458 pF @ 16 V | |
FET Feature | - | |
Power Dissipation (Max) | 170mW (Ta) | |
Operating Temperature | -55°C ~ 150°C (TJ) | |
Mounting Type | | |
Supplier Device Package | SOT-563 | |
Package / Case |
Product Listing:
ON Semiconductor NTZS3151PT1G MOSFET Power Electronics
Package: SOT-563
Features:
-High voltage breakdown rating of 200V
-Low gate charge
-Low on-state resistance
-Low input capacitance
-Low reverse transfer capacitance
-Low noise figure
-Fast switching speeds
-Optimized for low power applications
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NTZS3151PT1G SOT-563 MOSFET Power Electronics Transistor for High-efficiency and High-reliability Applications Images |