HMC789ST89ETR RF Power Transistors
Product Description:
The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications.
Features:
- High-performance, high-frequency, high-power transistor
- Suitable for use in amplifier applications
- Excellent gain and power performance
- Low noise
- Excellent linearity
- Wide frequency range
- High power handling capabilities
- High reliability
Applications:
- RF and microwave amplifiers
- Mobile communication systems
- Radar systems
- Satellite communication systems
- Aerospace and defense applications
- Wireless communication systems
Specifications:
- Frequency Range: 0.1-6000 MHz
- Power Gain: 20 dB
- Power Output: 50 W
- Noise Figure: 3 dB
- Input Impedance: 50 ohms
- Output Impedance: 50 ohms
- Operating Temperature: -55°C to +
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HMC789ST89ETR RF Power Transistors General Purpose Frequency 700MHz Images
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